Now showing items 1-2 of 2

    • Analysis and design of 4H-SiC bipolar mode field effect power (BMFET) 

      Di Benedetto, Luigi (Universita degli studi di Salerno, 2013-03-20)
      Analysis and design of a new Silicon Carbide polytype 4H (4H-SiC) bipolar power transistor are the main topics of this Ph.D. thesis. The device is the Bipolar Mode Field Effect Transistor (BMFET) and exploits the electric ...
    • Characterization, modeling and simulation of 4H-SiC power diodes 

      Freda Albanese, Loredana (Universita degli studi di Salerno, 2011-05-18)
      Exploring the attractive electrical properties of the Silicon Carbide (SiC) for power devices, the characterization and the analysis of 4H-SiC pin diodes is the main topic of this Ph.D. document. In particular, the thesis ...