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Graphene/silicon Schottky diode
| dc.contributor.author | Luongo, Giuseppe | |
| dc.date.accessioned | 2023-02-22T13:44:09Z | |
| dc.date.available | 2023-02-22T13:44:09Z | |
| dc.date.issued | 2020-02-10 | |
| dc.identifier.uri | http://elea.unisa.it:8080/xmlui/handle/10556/6425 | |
| dc.identifier.uri | http://dx.doi.org/10.14273/unisa-4497 | |
| dc.description | 2018 - 2019 | it_IT |
| dc.description.abstract | In this works we fabricated four graphene/silicon heterojunctions, which differ for structure and substrate type, and performed electrical and optical characterization. The first device was realized by depositing a layer of graphene on a trench patterned low n-doped silicon substrate. We obtained a graphene/silicon Schottky diode connected in parallel with a graphene/oxide/silicon MOS (Metal Oxide Semiconductor) capacitor. .. [edited by Author] | it_IT |
| dc.language.iso | en | it_IT |
| dc.publisher | Universita degli studi di Salerno | it_IT |
| dc.subject | Graphene | it_IT |
| dc.subject | Schottky | it_IT |
| dc.subject | Diode | it_IT |
| dc.title | Graphene/silicon Schottky diode | it_IT |
| dc.type | Doctoral Thesis | it_IT |
| dc.subject.miur | FIS/01 FISICA SPERIMENTALE | it_IT |
| dc.contributor.coordinatore | Attanasio, Carmine | it_IT |
| dc.description.ciclo | XXXII ciclo | it_IT |
| dc.contributor.tutor | Di Bartolomeo, Antonio | it_IT |
| dc.identifier.Dipartimento | Fisica "E.R. Caianiello" | it_IT |
