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Analysis and design of 4H-SiC bipolar mode field effect power (BMFET)
(Universita degli studi di Salerno, 2013-03-20)
Analysis and design of a new Silicon Carbide polytype 4H (4H-SiC) bipolar power transistor are
the main topics of this Ph.D. thesis. The device is the Bipolar Mode Field Effect Transistor
(BMFET) and exploits the electric ...