Graphene/silicon Schottky diode

Abstract

In this works we fabricated four graphene/silicon heterojunctions, which differ for structure and substrate type, and performed electrical and optical characterization. The first device was realized by depositing a layer of graphene on a trench patterned low n-doped silicon substrate. We obtained a graphene/silicon Schottky diode connected in parallel with a graphene/oxide/silicon MOS (Metal Oxide Semiconductor) capacitor. .. [edited by Author]